? semiconductor components industries, llc, 2011 april, 2011 ? rev. 5 1 publication order number: ntjs4405n/d ntjs4405n small signal mosfet 25 v, 1.2 a, single, n ? channel, sc ? 88 features ? advance planar technology for fast switching, low r ds(on) ? higher efficiency extending battery life ? pb ? free packages are available applications ? boost and buck converter ? load switch ? battery protection maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss 25 v gate ? to ? source voltage v gs 8.0 v drain current t < 5 s t a = 25 c i d 1.2 a continuous drain current (note 1) steady state t a = 25 c i d 1.0 a t a = 75 c 0.80 power dissipation (note 1) steady state p d 0.63 w power dissipation (note 1) t 5 s p d 0.89 w pulsed drain current t p = 10 s i dm 3.7 a operating junction and storage temperature t j , t stg ? 55 to +150 c source current (body diode) (note 1) i s 0.8 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c esd rating ? machine model 25 v thermal resistance ratings rating symbol max unit junction ? to ? lead ? steady state (note 1) r jl 102 c/w junction ? to ? ambient ? steady state (note 1) r ja 200 junction ? to ? ambient ? t 5 s (note 1) r ja 140 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). device package shipping ? ordering information ntjs4405nt1 sc ? 88 3000 / tape & reel http://onsemi.com v (br)dss r ds(on) typ i d max 25 v 249 m @ 4.5 v 299 m @ 2.7 v 1.2 a 1256 drain 3 gate 4 source n ? channel ntjs4405nt1g sc ? 88 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. ntjs4405nt4 sc ? 88 NTJS4405NT4G sc ? 88 (pb ? free) 10,000 / tape & reel marking diagram & pin assignment ts m 1 6 1 ts = device code m = date code = pb ? free package dds ddg (note: microdot may be in either location) 10,000 / tape & reel sc ? 88/sot ? 363 case 419b
ntjs4405n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 25 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 30 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 20 v t j = 25 c 1.0 a t j = 125 c 10 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 8.0 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.65 1.5 v negative threshold temperature coefficient v gs(th) /t j ? 2.0 mv/ c drain ? to ? source on resistance r ds(on) v gs = 4.5 v, i d = 0.6 a 249 350 m v gs = 2.7 v, i d = 0.2 a 299 400 v gs = 4.5 v, i d = 1.2 a 260 forward transconductance g fs v ds = 5.0 v, i d = 0.5 a 0.5 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 49 60 pf output capacitance c oss 22.4 30 reverse transfer capacitance c rss 8.0 12 total gate charge q g(tot) v gs = 4.5 v, v ds = 5.0 v, i d = 0.95 a 0.75 1.5 nc threshold gate charge q g(th) 0.10 gate ? to ? source charge q gs 0.30 0.50 gate ? to ? drain charge q gd 0.20 0.40 switching characteristics (note 3) turn ? on delay time t d(on) v gs = 4.5 v, v ds = 6.0 v, i d = 0.5 a, r g = 50 6.0 12 ns rise time t r 4.7 8.0 turn ? off delay time t d(off) 25 35 fall time t f 41 60 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 0.6 a t j = 25 c 0.82 1.20 v 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntjs4405n http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 0 5 1 3 1 v ds , drain ? to ? source voltage (volts) i d, drain current (amps) 2.5 0.5 0 figure 1. on ? region characteristics 0.5 2 2 1 2.5 1.5 1 0 0 figure 2. transfer characteristics v gs , gate ? to ? source voltage (volts) 0.4 0.2 0 figure 3. on ? resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) i d, drain current (amps) figure 4. on ? resistance vs. drain current and gate voltage ? 50 0 ? 25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 1.0 1.0 2.0 t j = ? 55 c t j = 125 c 75 150 i d = 0.6 a v gs = 4.5 v r ds(on), drain ? to ? source resistance (normalized) 2 25 c 0 5.0 figure 6. drain ? to ? source leakage current vs. voltage 3.5 v 7 v 5 4 v ds 5 v 0.6 v gs = 2 v 1.5 3.5 4.5 0.5 1.5 t j = 125 c 4.0 3.0 v gs = 4.5 v t j = ? 55 c t j = 25 c 0.1 0.4 1 0.3 0.2 i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) 0.2 0.6 2 1.4 0.4 1.2 0.8 v gs = 2.7 v t j = 25 c 0.8 1.8 1.6 1.6 1.8 v gs = 4.5 v 1 5 1000 10 v ds , drain ? to ? source voltage (volts) i dss, leakage (na) 025 15 10000 10 v gs = 0 v t j = 125 c 20 100 t j = 150 c 2 3 4 0.5 3.5 1.5 2.5 4.5 v gs = 2.5 v v gs = 3 v 4 v 6 v 5.5 v 4.5 v
ntjs4405n http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) v gs = 4.5 v figure 7. capacitance variation 0 0.6 4 1 0 figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge q g , total gate charge (nc) v gs, gate ? to ? source voltage (volts) i d = 0.95 a t j = 25 c 0.8 2 3 5 0.4 0.2 q g(tot) q gs q gd figure 9. resistive switching time variation vs. gate resistance 100 1 r g , gate resistance (ohms) t, time (ns) 1000 10 1 100 10 t d(off) figure 10. diode forward voltage vs. current 0.8 0.1 0 v sd , source ? to ? drain voltage (volts) i s , source current (amps) v gs = 0 v 1.2 0.6 0.4 0.4 0.5 0.6 0.2 0.3 1 0.2 t j = 25 c v gs = 0 v 10 0 150 125 75 25 0 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) t j = 25 c c oss c iss c rss 525 15 50 100 20 5 10 v ds = 0 v c iss c rss v gs v ds v ds = 5.0 v v dd = 6.0 v i d = 0.5 a v gs = 4.5 v t d(on) t f t r 0.7 0.8 0.9 1 1.1 0.9 0.7 0.5 0.3
ntjs4405n http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ntjs4405n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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